SWB076R68E7T PDF and Equivalents Search

 

SWB076R68E7T Specs and Replacement

Type Designator: SWB076R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO263

SWB076R68E7T substitution

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SWB076R68E7T datasheet

 ..1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB076R68E7T

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWB076R68E7T

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So... See More ⇒

 9.2. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWB076R68E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter... See More ⇒

 9.3. Size:1051K  samwin
 swb078r08et swp078r08et.pdf pdf_icon

SWB076R68E7T

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS 80V TO-263 TO-220 High ruggedness ID 60A Low RDS(ON) (Typ 7.8m )@VGS=10V RDS(ON) 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge... See More ⇒

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Detailed specifications: SWB062R08E8T, SWB062R68E7T, SWB065R68E7T, SWB068R08ET, SWB068R68E7T, SWB072R06ET, SWB072R08ET, SWB075R08E7T, AO4407A, SWB078R08ET, SWB085R68E7T, SWB086R68E7T, SWB088R06VT, SWB088R08E8T, SWB090R08ET, SWB10N65K2, SWB13N65K2

Keywords - SWB076R68E7T MOSFET specs

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 SWB076R68E7T replacement

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