SWB078R08ET MOSFET Datasheet: N-Ch, 80V, 60A. Full specification with pinout and replacement list

SWB078R08ET Specs and Replacement

Type Designator: SWB078R08ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 314 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm

Package: TO263

SWB078R08ET substitution

- MOSFET ⓘ Cross-Reference Search

SWB078R08ET datasheet

..1. Size:1051K samwin
swb078r08et swp078r08et.pdf pdf_icon

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS 80V TO-263 TO-220 High ruggedness ID 60A Low RDS(ON) (Typ 7.8m )@VGS=10V RDS(ON) 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge... See More ⇒

9.1. Size:751K samwin
swp076r68e7t swb076r68e7t.pdf pdf_icon

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

9.2. Size:1029K samwin
swb072r08et swp072r08et.pdf pdf_icon

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So... See More ⇒

9.3. Size:766K samwin
swb075r06et swp075r06et.pdf pdf_icon

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter... See More ⇒