SWB085R68E7T MOSFET Datasheet: N-Ch, 68V, 75A. Full specification with pinout and replacement list

SWB085R68E7T Specs and Replacement

Type Designator: SWB085R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO263

SWB085R68E7T substitution

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SWB085R68E7T datasheet

..1. Size:755K samwin
swb085r68e7t swp085r68e7t.pdf pdf_icon

SW085R68E7T N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.5m )@VGS=10V RDS(ON) 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S... See More ⇒

9.1. Size:742K samwin
swp088r08e8t swb088r08e8t.pdf pdf_icon

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.4m )@VGS=10V RDS(ON) 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S... See More ⇒

9.2. Size:688K samwin
swp088r06vt swb088r06vt.pdf pdf_icon

SW088R06VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 8.2m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 48nC) 8.2m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 3 3 Application Electronic Ballast, Motor Control Sync... See More ⇒

9.3. Size:831K samwin
swp086r68e7t swb086r68e7t.pdf pdf_icon

SW086R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.2m )@VGS=10V Low Gate Charge (Typ 64nC) RDS(ON) 9.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So... See More ⇒

Detailed specifications: SWB065R68E7T, SWB068R08ET, SWB068R68E7T, SWB072R06ET, SWB072R08ET, SWB075R08E7T, SWB076R68E7T, SWB078R08ET, IRFP064N, SWB086R68E7T, SWB088R06VT, SWB088R08E8T, SWB090R08ET, SWB10N65K2, SWB13N65K2, SWB16N70K, SWB640D