All MOSFET. SWB088R08E8T Datasheet

 

SWB088R08E8T Datasheet and Replacement


   Type Designator: SWB088R08E8T
   Marking Code: SW088R08E8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 89 nC
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: TO263
 

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SWB088R08E8T Datasheet (PDF)

 ..1. Size:742K  samwin
 swp088r08e8t swb088r08e8t.pdf pdf_icon

SWB088R08E8T

SW088R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.4m)@VGS=10VRDS(ON) : 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S

 6.1. Size:688K  samwin
 swp088r06vt swb088r06vt.pdf pdf_icon

SWB088R08E8T

SW088R06VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263 BVDSS : 60V High ruggednessID : 100A Low RDS(ON) (Typ 10m)@VGS=4.5V(Typ 8.2m)@VGS=10VRDS(ON) : 10m@VGS=4.5V Low Gate Charge (Typ 48nC)8.2m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested1 12 2 23 3 Application: Electronic Ballast, Motor ControlSync

 9.1. Size:755K  samwin
 swb085r68e7t swp085r68e7t.pdf pdf_icon

SWB088R08E8T

SW085R68E7TN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220BVDSS : 68V High ruggednessID : 75A Low RDS(ON) (Typ 9.5m)@VGS=10VRDS(ON) : 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S

 9.2. Size:831K  samwin
 swp086r68e7t swb086r68e7t.pdf pdf_icon

SWB088R08E8T

SW086R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 75A Low RDS(ON) (Typ 9.2m)@VGS=10V Low Gate Charge (Typ 64nC)RDS(ON) :9.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

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Datasheet: SWB072R06ET , SWB072R08ET , SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , IRFZ44N , SWB090R08ET , SWB10N65K2 , SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D .

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