SWB090R08ET PDF and Equivalents Search

 

SWB090R08ET Specs and Replacement

Type Designator: SWB090R08ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 254 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO263

SWB090R08ET substitution

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SWB090R08ET datasheet

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 swp090r08et swb090r08et.pdf pdf_icon

SWB090R08ET

SW090R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V ID 80A High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=10V RDS(ON) 9.0m Low Gate Charge (Typ 77nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2. Drain 3. Sour... See More ⇒

Detailed specifications: SWB072R08ET, SWB075R08E7T, SWB076R68E7T, SWB078R08ET, SWB085R68E7T, SWB086R68E7T, SWB088R06VT, SWB088R08E8T, IRF3205, SWB10N65K2, SWB13N65K2, SWB16N70K, SWB640D, SWB7N65DW, SWC1N60, SWC2N40D, SWD020R03VLT

Keywords - SWB090R08ET MOSFET specs

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