All MOSFET. SWB090R08ET Datasheet

 

SWB090R08ET Datasheet and Replacement


   Type Designator: SWB090R08ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 126.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 254 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO263
 

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SWB090R08ET Datasheet (PDF)

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SWB090R08ET

SW090R08ETN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263 BVDSS : 80VID : 80A High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=10VRDS(ON) : 9.0mLow Gate Charge (Typ 77nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification, 3 31Li Battery Protect Board, Inverter1. Gate 2. Drain 3. Sour

Datasheet: SWB072R08ET , SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , IRF3205 , SWB10N65K2 , SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT .

History: DATP057N06N | UTM3023 | NDP606A | HPD180PNE1DTA | SDF450 | FQPF2N50 | IRHNA57260

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