All MOSFET. SWB13N65K2 Datasheet

 

SWB13N65K2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWB13N65K2
   Marking Code: SW13N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO263

 SWB13N65K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWB13N65K2 Datasheet (PDF)

 ..1. Size:1576K  samwin
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SWB13N65K2 SWB13N65K2

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPW60R045CP

 

 
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