All MOSFET. SWB13N65K2 Datasheet

 

SWB13N65K2 Datasheet and Replacement


   Type Designator: SWB13N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO263
 

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SWB13N65K2 Datasheet (PDF)

 ..1. Size:1576K  samwin
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SWB13N65K2

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

Datasheet: SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET , SWB10N65K2 , IRF840 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT .

History: IPD038N06N3 | SWB640D

Keywords - SWB13N65K2 MOSFET datasheet

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