All MOSFET. SWD055R03VT Datasheet

 

SWD055R03VT Datasheet and Replacement


   Type Designator: SWD055R03VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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SWD055R03VT Datasheet (PDF)

 ..1. Size:659K  samwin
swd055r03vt swi055r03vt.pdf pdf_icon

SWD055R03VT

SW055R03VTN-channel Enhanced mode TO-252/TO-251 MOSFETFeaturesBVDSS : 30VTO-252 TO-251 High ruggednessID : 80A Low RDS(ON) (Typ 6.2m)@VGS=4.5VRDS(ON) : 6.2m@VGS=4.5V(Typ 4.4m)@VGS=10V Low Gate Charge (Typ 25nC)4.4m@VGS=10V Improved dv/dt Capability 1122 100% Avalanche Tested 233 Application:DC-DC Converter,Motor ControlS

 9.1. Size:820K  samwin
swd056r68e7t.pdf pdf_icon

SWD055R03VT

SW056R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 5.7m)@VGS=10V Low Gate Charge (Typ 102nC)RDS(ON) :5.7m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Desc

 9.2. Size:614K  samwin
swi051r08es swd051r08es.pdf pdf_icon

SWD055R03VT

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 80V TO-251 TO-252 ID : 90A High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V RDS(ON) : 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv

 9.3. Size:846K  samwin
swd050r95e8s.pdf pdf_icon

SWD055R03VT

SW050R95E8SN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 100V High ruggednessID : 100A Low RDS(ON) (Typ 6.0m)@VGS=10V Low Gate Charge (Typ 48nC)RDS(ON) : 6.0m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral

Datasheet: SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , SWD040R03VLT , SWD046R68E8T , SWD050R95E8S , SWD051R08ES , AON6414A , SWD056R68E7T , SWD062R08E8T , SWD062R68E7T , SWD065R03VLT , SWD065R68E7T , SWD068R08E8T , SWD068R68E7T , SWD070R08E7T .

History: NP90N04VDK | KIA7N60H-220F

Keywords - SWD055R03VT MOSFET datasheet

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