All MOSFET. SWD056R68E7T Datasheet

 

SWD056R68E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD056R68E7T
   Marking Code: SW056R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 178.6 W
   Maximum Drain-Source Voltage |Vds|: 68 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 102 nC
   Rise Time (tr): 80 nS
   Drain-Source Capacitance (Cd): 357 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: TO252

 SWD056R68E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD056R68E7T Datasheet (PDF)

 ..1. Size:820K  samwin
 swd056r68e7t.pdf

SWD056R68E7T SWD056R68E7T

SW056R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 5.7m)@VGS=10V Low Gate Charge (Typ 102nC)RDS(ON) :5.7m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Desc

 9.1. Size:659K  samwin
 swd055r03vt swi055r03vt.pdf

SWD056R68E7T SWD056R68E7T

SW055R03VTN-channel Enhanced mode TO-252/TO-251 MOSFETFeaturesBVDSS : 30VTO-252 TO-251 High ruggednessID : 80A Low RDS(ON) (Typ 6.2m)@VGS=4.5VRDS(ON) : 6.2m@VGS=4.5V(Typ 4.4m)@VGS=10V Low Gate Charge (Typ 25nC)4.4m@VGS=10V Improved dv/dt Capability 1122 100% Avalanche Tested 233 Application:DC-DC Converter,Motor ControlS

 9.2. Size:614K  samwin
 swi051r08es swd051r08es.pdf

SWD056R68E7T SWD056R68E7T

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 80V TO-251 TO-252 ID : 90A High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V RDS(ON) : 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv

 9.3. Size:846K  samwin
 swd050r95e8s.pdf

SWD056R68E7T SWD056R68E7T

SW050R95E8SN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 100V High ruggednessID : 100A Low RDS(ON) (Typ 6.0m)@VGS=10V Low Gate Charge (Typ 48nC)RDS(ON) : 6.0m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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