SWD065R03VLT PDF and Equivalents Search

 

SWD065R03VLT Specs and Replacement

Type Designator: SWD065R03VLT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 196 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

SWD065R03VLT substitution

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SWD065R03VLT datasheet

 ..1. Size:727K  samwin
swd065r03vlt.pdf pdf_icon

SWD065R03VLT

SW065R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness ID 70A Low RDS(ON) (Typ 6.6m )@VGS=10V Low Gate Charge (Typ 33nC) RDS(ON) 6.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Drain 3.Source 3 Genera... See More ⇒

 7.1. Size:683K  samwin
swd065r68e7t.pdf pdf_icon

SWD065R03VLT

SW065R68E7T N-channel Enhanced mode TO-252 MOSFET TO-252 Features BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 6.3m )@VGS=10V RDS(ON) 6.3m Low Gate Charge (Typ 75nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 Application Synchronous Rectification, 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Sourc... See More ⇒

 9.1. Size:697K  samwin
swd068r08e8t.pdf pdf_icon

SWD065R03VLT

SW068R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.7m )@VGS=10V RDS(ON) 6.7m Low Gate Charge (Typ 128nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Motor Drivers 1. Gate 2.Drain 3.Source 3 Genera... See More ⇒

 9.2. Size:753K  samwin
swi069r10vs swd069r10vs.pdf pdf_icon

SWD065R03VLT

SW069R10VS N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m @VGS=10V 100% Avalanche Tested 1 1 2 2 3 3 Application Li Battery Protect Board,... See More ⇒

Detailed specifications: SWD040R03VLT, SWD046R68E8T, SWD050R95E8S, SWD051R08ES, SWD055R03VT, SWD056R68E7T, SWD062R08E8T, SWD062R68E7T, IRFB4115, SWD065R68E7T, SWD068R08E8T, SWD068R68E7T, SWD070R08E7T, SWD075R06ET, SWD076R68E7T, SWD078R08E8T, SWD085R68E7T

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