SWD10N65K PDF and Equivalents Search

 

SWD10N65K Specs and Replacement

Type Designator: SWD10N65K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO252

SWD10N65K substitution

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SWD10N65K datasheet

 ..1. Size:1328K  samwin
 swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf pdf_icon

SWD10N65K

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio... See More ⇒

 0.1. Size:952K  samwin
 swf10n65k2 swd10n65k2 swb10n65k2.pdf pdf_icon

SWD10N65K

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.3 )@VGS=10V RDS(ON) 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application Charge, LED, PC Power 1. Gate 2. Drain 3. Sou... See More ⇒

 8.1. Size:1355K  samwin
 swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf pdf_icon

SWD10N65K

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha... See More ⇒

 8.2. Size:820K  samwin
 swf10n80k2 swn10n80k2 swd10n80k2.pdf pdf_icon

SWD10N65K

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS 800V Features ID 10A High ruggedness RDS(ON) 0.58 Low RDS(ON) (Typ 0.58 )@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED,Charger,PC Power 1. Gate 2. Drain ... See More ⇒

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Detailed specifications: SWD075R06ET, SWD076R68E7T, SWD078R08E8T, SWD085R68E7T, SWD086R68E7T, SWD088R08E8T, SWD106R95VS, SWD10N50K, IRF4905, SWD10N65K2, SWD10N80K2, SWD110R03VT, SWD13N60K2, SWD13N65K2, SWD15N65J, SWD160R12VT, SWD19N10

Keywords - SWD10N65K MOSFET specs

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