SWD10N65K MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD10N65K
Marking Code: SW10N65K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO252
SWD10N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD10N65K Datasheet (PDF)
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf
SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio
swf10n65k2 swd10n65k2 swb10n65k2.pdf
SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.3)@VGS=10V RDS(ON) : 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: Charge, LED, PC Power 1. Gate 2. Drain 3. Sou
swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf
SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha
swf10n80k2 swn10n80k2 swd10n80k2.pdf
SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS : 800V Features ID : 10A High ruggedness RDS(ON) : 0.58 Low RDS(ON) (Typ 0.58)@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application:LED,Charger,PC Power 1. Gate 2. Drain
swf10n70k swd10n70k.pdf
SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D
sw10n70k swf10n70k swd10n70k.pdf
SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
