SWD13N60K2 MOSFET Datasheet: N-Ch, 600V, 13A. Full specification with pinout and replacement list

SWD13N60K2 Specs and Replacement

Type Designator: SWD13N60K2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.278 Ohm

Package: TO252

SWD13N60K2 substitution

- MOSFET ⓘ Cross-Reference Search

SWD13N60K2 datasheet

..1. Size:878K samwin
swf13n60k2 swi13n60k2 swd13n60k2.pdf pdf_icon

SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS 600V Features TO-220F TO-251 TO-252 ID 13A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3... See More ⇒

7.1. Size:1576K samwin
swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf pdf_icon

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3... See More ⇒

Detailed specifications: SWD086R68E7T, SWD088R08E8T, SWD106R95VS, SWD10N50K, SWD10N65K, SWD10N65K2, SWD10N80K2, SWD110R03VT, IRFP260, SWD13N65K2, SWD15N65J, SWD160R12VT, SWD19N10, SWD1N60DC, SWD200R10VT, SWD20N20D, SWD2N40DC