All MOSFET. SWD13N65K2 Datasheet

 

SWD13N65K2 Datasheet and Replacement


   Type Designator: SWD13N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO252
 

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SWD13N65K2 Datasheet (PDF)

 ..1. Size:1576K  samwin
swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf pdf_icon

SWD13N65K2

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

 7.1. Size:878K  samwin
swf13n60k2 swi13n60k2 swd13n60k2.pdf pdf_icon

SWD13N65K2

SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 13A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED, Charger, Adaptor 1. Gate 2. Drain 3

Datasheet: SWD088R08E8T , SWD106R95VS , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 , 2SK3568 , SWD15N65J , SWD160R12VT , SWD19N10 , SWD1N60DC , SWD200R10VT , SWD20N20D , SWD2N40DC , SWD2N60DC .

History: KIA7N60U | SRT08N025HC56TR-G | RU3710R | RU30L40M-C | STH275N8F7-2AG | SSM9987GH | RD3H045SP

Keywords - SWD13N65K2 MOSFET datasheet

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