All MOSFET. SWD2N70D Datasheet

 

SWD2N70D Datasheet and Replacement


   Type Designator: SWD2N70D
   Marking Code: SW2N70D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm
   Package: TO252
 

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SWD2N70D Datasheet (PDF)

 ..1. Size:1061K  samwin
swn2n70d swd2n70d swl2n70d swf2n70d.pdf pdf_icon

SWD2N70D

SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS : 700V TO-220F TO-251N TO-252 TO-126 ID : 2A High ruggedness Low RDS(ON) (Typ 5)@VGS=10V RDS(ON) : 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application: Charger,LED 3 3 3 3 1 1. Gate 2.

 9.1. Size:576K  samwin
swd2n60dc swi2n60dc.pdf pdf_icon

SWD2N70D

SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET BVDSS :600V Features TO-252 TO-251 ID : 2A High ruggedness RDS(ON) : 3.9 Low RDS(ON) (Typ 3.9)@VGS=10V Low Gate Charge (Typ9.5nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 2 1 3 2 Application:Charger,Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Descripti

 9.2. Size:828K  samwin
swsi2n40dc swd2n40dc.pdf pdf_icon

SWD2N70D

SW2N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-251S BVDSS : 400V TO-252 ID : 2A High ruggedness Low RDS(ON) (Typ 2.8)@VGS=10V RDS(ON) : 2.8 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description

 9.3. Size:688K  samwin
swn2n65k swd2n65k.pdf pdf_icon

SWD2N70D

SW2N65K N-channel Enhanced mode TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-252 TO-251N ID : 2A High ruggedness Low RDS(ON) (Typ 1.9)@VGS=10V RDS(ON) : 1.9 Low Gate Charge (Typ 7.8nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:Power Supply,LED Boost 1 3 3 3 1. Gate 2. Drain 3. Source General Descrip

Datasheet: SWD160R12VT , SWD19N10 , SWD1N60DC , SWD200R10VT , SWD20N20D , SWD2N40DC , SWD2N60DC , SWD2N65K , IRLZ44N , SWD3205B , SWD340R10VT , SWD3N80D , SWD4N40DC , SWD4N50K , SWD4N60D , SWD4N60DA , SWD4N60K .

History: NTR4101PT1G | IRLU8743 | SFP026N100C3 | SI7302DN | WMP15N65F2 | IRLU3714ZPBF | SSM95T07GP

Keywords - SWD2N70D MOSFET datasheet

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