All MOSFET. SWD4N70K2 Datasheet

 

SWD4N70K2 Datasheet and Replacement


   Type Designator: SWD4N70K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO252
 

 SWD4N70K2 substitution

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SWD4N70K2 Datasheet (PDF)

 ..1. Size:907K  samwin
 swf4n70k2 swn4n70k2 swd4n70k2.pdf pdf_icon

SWD4N70K2

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

 6.1. Size:738K  samwin
 swf4n70k swi4n70k swd4n70k.pdf pdf_icon

SWD4N70K2

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 700V High ruggedness ID : 4A Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

 7.1. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWD4N70K2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 7.2. Size:1038K  samwin
 swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWD4N70K2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

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Datasheet: SWD4N60D , SWD4N60DA , SWD4N60K , SWD4N65DA , SWD4N65DD , SWD4N65K , SWD4N65K2 , SWD4N70K , STP80NF70 , SWD4N70L , SWD4N80D , SWD4N80K , SWD540 , NCE60R360D , NCE60R360 , NCE60R360F , SWD6N60D .

History: MTB11N03Q8 | SSM9915GJ | STB55NF06 | KMB060N60FA | RF6E045AJ | SSH5N90A | STI24N60M2

Keywords - SWD4N70K2 MOSFET datasheet

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