SWD4N80K PDF and Equivalents Search

 

SWD4N80K Specs and Replacement

Type Designator: SWD4N80K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO252

SWD4N80K substitution

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SWD4N80K datasheet

 ..1. Size:965K  samwin
swf4n80k swn4n80k swd4n80k.pdf pdf_icon

SWD4N80K

SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒

 7.1. Size:839K  samwin
swf4n80d swn4n80d swd4n80d.pdf pdf_icon

SWD4N80K

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.... See More ⇒

 7.2. Size:1046K  samwin
swf4n80d swn4n80d swd4n80d swj4n80d.pdf pdf_icon

SWD4N80K

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features TO-220F TO-251N TO-252 TO-262N BVDSS 800V High ruggedness ID 4A Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 1 2 2 Application Adaptor, LED, 2 2 3 3 3 3 Industrial Power 1 1. Gate 2... See More ⇒

 9.1. Size:833K  samwin
swsi4n40dc swd4n40dc.pdf pdf_icon

SWD4N80K

SW4N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-252 BVDSS 400V TO-251S ID 4A High ruggedness Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 11.7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application LED, DC-DC 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This ... See More ⇒

Detailed specifications: SWD4N65DA, SWD4N65DD, SWD4N65K, SWD4N65K2, SWD4N70K, SWD4N70K2, SWD4N70L, SWD4N80D, SI2302, SWD540, NCE60R360D, NCE60R360, NCE60R360F, SWD6N60D, SWD6N65D, SWD6N65K, SWD6N70DB

Keywords - SWD4N80K MOSFET specs

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