SWD6N70DB Specs and Replacement
Type Designator: SWD6N70DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 174.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 93 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO252
SWD6N70DB substitution
- MOSFET ⓘ Cross-Reference Search
SWD6N70DB datasheet
swf6n70db swd6n70db swn6n70db.pdf
SW6N70DB N-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFET Features BVDSS 700V TO-220F TO-252 TO-251N ID 6A High ruggedness Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 3 Application LED, PC Power, Charger 3 3 1 1. Gate 2. Drain 3. Source 3 Gen... See More ⇒
sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l ... See More ⇒
swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l ... See More ⇒
swf6n70k swn6n70k swd6n70k.pdf
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 6A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1... See More ⇒
Detailed specifications: SWD4N80K, SWD540, NCE60R360D, NCE60R360, NCE60R360F, SWD6N60D, SWD6N65D, SWD6N65K, 2N60, SWD6N80DE, SWD70N10V, SWD740D, SWD7N60K2F, SWD7N65DA, SWD7N65DD, SWD7N65J, SWD7N65K
Keywords - SWD6N70DB MOSFET specs
SWD6N70DB cross reference
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SWD6N70DB replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SSW90R420S2 | HCD65R2K7
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