All MOSFET. SWD830D1 Datasheet

 

SWD830D1 Datasheet and Replacement


   Type Designator: SWD830D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm
   Package: TO252
 

 SWD830D1 substitution

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SWD830D1 Datasheet (PDF)

 ..1. Size:1198K  samwin
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SWD830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS : 500V Features ID : 5A High ruggedness RDS(ON) : 1.33 Low RDS(ON) (Typ 1.33)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application: DC-DCLEDPC 1 1

Datasheet: SWD7N65DA , SWD7N65DD , SWD7N65J , SWD7N65K , SWD7N65K2 , SWD7N65M , SWD7N70K , SWD80N04V , AON7403 , SWD8N65D , SWD8N70K , SWD8N80K , SWD9N10V1 , SWD9N25D , SWD9N50D , SWF10N50K , SWF10N60D .

History: BUZ48 | SSFN2569 | SML5025BN

Keywords - SWD830D1 MOSFET datasheet

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