SWD830D1 PDF and Equivalents Search

 

SWD830D1 Specs and Replacement

Type Designator: SWD830D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm

Package: TO252

SWD830D1 substitution

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SWD830D1 datasheet

 ..1. Size:1198K  samwin
 swp830d1 swi830d1 swd830d1 swf830d1.pdf pdf_icon

SWD830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS 500V Features ID 5A High ruggedness RDS(ON) 1.33 Low RDS(ON) (Typ 1.33 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application DC-DC LED PC 1 1... See More ⇒

Detailed specifications: SWD7N65DA, SWD7N65DD, SWD7N65J, SWD7N65K, SWD7N65K2, SWD7N65M, SWD7N70K, SWD80N04V, IRF9640, SWD8N65D, SWD8N70K, SWD8N80K, SWD9N10V1, SWD9N25D, SWD9N50D, SWF10N50K, SWF10N60D

Keywords - SWD830D1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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