SWD9N25D Specs and Replacement
Type Designator: SWD9N25D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 104 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO252
SWD9N25D substitution
- MOSFET ⓘ Cross-Reference Search
SWD9N25D datasheet
swp9n25d swd9n25d.pdf
SW9N25D N-channel Enhanced mode TO-220/TO-252 MOSFET BVDSS 250V Features TO-220 TO-252 ID 9A High ruggedness RDS(ON) 0.37 Low RDS(ON) (Typ 0.37 )@VGS=10V Low Gate Charge (Typ 20.3nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1 Application LED , DC-DC 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒
swf9n50d swp9n50d swd9n50d.pdf
SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS 500V ID 9A High ruggedness Low RDS(ON) (Typ 0.68 )@VGS=10V RDS(ON) 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application DC-DC LED PC 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒
swd9n10v1.pdf
SW9N10V1 N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 100V High ruggedness ID 9A Low RDS(ON) (Typ 138m )@VGS=4.5V (Typ 115m )@VGS=10V RDS(ON) 138m @VGS=4.5V Low Gate Charge (Typ 5.6nC) Improved dv/dt Capability 115m @VGS=10V 1 2 100% Avalanche Tested 3 Application DC-DC Converter Inverter 2 Sync... See More ⇒
Detailed specifications: SWD7N65M, SWD7N70K, SWD80N04V, SWD830D1, SWD8N65D, SWD8N70K, SWD8N80K, SWD9N10V1, RU7088R, SWD9N50D, SWF10N50K, SWF10N60D, SWF10N65D, SWF10N65K, SWF10N65K2, SWF10N80D, SWF10N80K2
Keywords - SWD9N25D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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