SWF10N65K Datasheet and Replacement. Cross Reference Search

SWF10N65K Datasheet (PDF)

..1. Size:1328K samwin
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf pdf_icon

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

0.1. Size:952K samwin
swf10n65k2 swd10n65k2 swb10n65k2.pdf pdf_icon

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.3)@VGS=10V RDS(ON) : 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: Charge, LED, PC Power 1. Gate 2. Drain 3. Sou

6.1. Size:1319K samwin
swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf pdf_icon

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

6.2. Size:728K samwin
sw10n65 swp10n65 swf10n65.pdf pdf_icon

SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This

Datasheet: SWD8N70K , SWD8N80K , SWD9N10V1 , SWD9N25D , SWD9N50D , SWF10N50K , SWF10N60D , SWF10N65D , 5N50 , SWF10N65K2 , SWF10N80D , SWF10N80K2 , SWF11N65D , SWF12N60D , SWF13N50D , SWF13N60D , SWF13N60K2 .