SWF16N70K MOSFET. Datasheet pdf. Equivalent
Type Designator: SWF16N70K
Marking Code: SW16N70K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO220F
SWF16N70K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWF16N70K Datasheet (PDF)
swu16n70k swb16n70k swf16n70k.pdf
SW16N70K N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features TO-262 TO-220F BVDSS : 700V TO-263 High ruggedness ID : 16A Low RDS(ON) (Typ 0.23)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 0.23 Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 Application: DC-DC,LED,PC 2 2 3 3 3 1. Gate 2. Drain 3. S
swf16n70d.pdf
SW16N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.54)@VGS=10V ID : 16A Low Gate Charge (Typ 67nC) RDS(ON) : 0.54 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
sw16n65d swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
swf16n60d.pdf
SW16N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10V ID : 16A Low Gate Charge (Typ 68nC) RDS(ON) : 0.4 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
sw16n65k swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source
swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
swf16n60k.pdf
SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
