All MOSFET. SWF20N65K Datasheet

 

SWF20N65K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWF20N65K
   Marking Code: SW20N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220F

 SWF20N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWF20N65K Datasheet (PDF)

 ..1. Size:1121K  samwin
swp20n65k swf20n65k sww20n65k swj20n65k.pdf

SWF20N65K SWF20N65K

SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat

 0.1. Size:663K  samwin
swf20n65k2.pdf

SWF20N65K SWF20N65K

SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This

 0.2. Size:635K  samwin
sw20n65k2 swf20n65k2.pdf

SWF20N65K SWF20N65K

SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This

 6.1. Size:716K  samwin
swf20n65d swt20n65d.pdf

SWF20N65K SWF20N65K

SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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