SWHA020R03VLT Specs and Replacement
Type Designator: SWHA020R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ -
Output Capacitance: 1022 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: DFN5X6
SWHA020R03VLT substitution
- MOSFET ⓘ Cross-Reference Search
SWHA020R03VLT datasheet
..1. Size:732K samwin
swha020r03vlt.pdf 
SW020R03VLT Features N-channel Enhanced mode DFN5*6 MOSFET High ruggedness BVDSS 30V DFN5*6 Low RDS(ON) (Typ 3.4m )@VGS=4.5V (Typ 1.9m )@VGS=10V ID 110A 1 8 Low Gate Charge (Typ 143nC) 2 7 RDS(ON) 3.4m @VGS=4.5V Improved dv/dt Capability 6 3 100% Avalanche Tested 5 4 1.9m @VGS=10V Application Synchronous Rectification, D Li Battery Prot... See More ⇒
8.1. Size:618K samwin
swha026r03vt.pdf 
SW026R03VT N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 30V High ruggedness DFN5*6 Low RDS(ON) (Typ 3.4m )@VGS=4.5V ID 19A (Typ 2.9m )@VGS=10V 1 8 RDS(ON) 3.4m @VGS=4.5V Low Gate Charge (Typ 112nC) 2 7 6 3 Improved dv/dt Capability 2.9m @VGS=10V 5 4 100% Avalanche Tested Application DC-DC Converter, Inverte... See More ⇒
9.1. Size:913K samwin
swh055r03vt swha055r03vt.pdf 
SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A... See More ⇒
9.2. Size:730K samwin
swha065r03vlt.pdf 
SW065R03VLT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 30V High ruggedness Low RDS(ON) (Typ 9.7m )@VGS=4.5V 1 8 ID 58A (Typ 6.4m )@VGS=10V 2 7 RDS(ON) 9.7m @VGS=4.5V 6 Low Gate Charge (Typ 34nC) 3 5 Improved dv/dt Capability 4 6.4m @VGS=10V 100% Avalanche Tested Application Synchronous Rectification, D Li Battery Protect... See More ⇒
9.3. Size:784K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf 
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒
9.4. Size:856K samwin
swha088r06vt.pdf 
SW088R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V ID 50A High ruggedness 1 8 Low RDS(ON) (Typ 9.9m )@VGS=4.5V 2 7 RDS(ON) 9.9m @VGS=4.5V 6 3 (Typ 8.3m )@VGS=10V 5 4 Low Gate Charge (Typ 49nC) 8.3m @VGS=10V Improved dv/dt Capability D 100% Avalanche Tested Application Electronic Ballast, Motor 4.Gate 5,6,7,8.Dra... See More ⇒
9.5. Size:681K samwin
sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf 
SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A... See More ⇒
9.6. Size:1012K samwin
swi088r06vt swd088r06vt swha088r06vt.pdf 
SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati... See More ⇒
9.7. Size:747K samwin
swha069r10vs.pdf 
SW069R10VS N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9m )@VGS=4.5V 1 8 ID 60A Low RDS(ON) (Typ 7m )@VGS=10V 2 7 6 3 RDS(ON) 9m @VGS=4.5V Low Gate Charge (Typ 45nC) 5 4 Improved dv/dt Capability 7m @VGS=10V 100% Avalanche Tested Application Li Battery Protect Board, D Synchronous ... See More ⇒
9.8. Size:916K samwin
swi069r06vt swha069r06vt.pdf 
SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 7.0m )@VGS=4.5V (Typ 6.0m )@VGS=10V RDS(ON) 7.0m @VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m @VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application... See More ⇒
9.9. Size:910K samwin
swha069r06vt.pdf 
SW069R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 5.7m )@VGS=4.5V 1 8 2 7 (Typ 4.9m )@VGS=10V 6 RDS(ON) 5.7m @VGS=4.5V 3 Low Gate Charge (Typ 84nC) 5 4 Improved dv/dt Capability 4.9m @VGS=10V 100% Avalanche Tested D Application Electronic Ballast, Motor Control Inverter 4.G... See More ⇒
9.10. Size:731K samwin
swha056r68e7t.pdf 
SW056R68E7T N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 68V DFN5*6 High ruggedness Low RDS(ON) (Typ 5.5m )@VGS=10V ID 100A 1 8 Low Gate Charge (Typ 99nC) 2 7 RDS(ON) 5.5m Improved dv/dt Capability 6 3 5 100% Avalanche Tested 4 D Application Synchronous Rectification, Li Battery Protect Board, Inverter G 4. Gate 5,6,7,8.Drain 1,2,... See More ⇒
9.11. Size:908K samwin
sw055r03vt swh055r03vt swha055r03vt.pdf 
SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D Application DC-DC Converte... See More ⇒
9.12. Size:738K samwin
swha018r03vlt.pdf 
SW018R03VLT Features N-channel Enhanced mode DFN5*6 MOSFET High ruggedness BVDSS 30V DFN5*6 Low RDS(ON) (Typ 2.5m )@VGS=4.5V (Typ 1.6m )@VGS=10V ID 120A 1 8 Low Gate Charge (Typ 153nC) 2 7 RDS(ON) 2.5m @VGS=4.5V Improved dv/dt Capability 6 3 100% Avalanche Tested 5 4 1.6m @VGS=10V Application Synchronous Rectification, D Li Battery Prot... See More ⇒
9.13. Size:708K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf 
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A... See More ⇒
Detailed specifications: SWF8N80K, SWF9N50D, SWH040R03VLT, SWH045R02VT, SWH065R03VLT, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, IRFZ24N, SWHA026R03VT, SWHA056R68E7T, SWHA065R03VLT, SWHA069R06VT, SWHA106R95VS, SWHA110R06VT, SWHA120R45VT, SWHA130R06VT
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