SWHA056R68E7T Datasheet and Replacement

SW056R68E7TN-channel Enhanced mode DFN5*6 MOSFETFeaturesBVDSS : 68VDFN5*6 High ruggedness Low RDS(ON) (Typ 5.5m)@VGS=10V ID : 100A18 Low Gate Charge (Typ 99nC)2 7RDS(ON) : 5.5m Improved dv/dt Capability 635 100% Avalanche Tested 4D Application:Synchronous Rectification,Li Battery Protect Board, InverterG4. Gate 5,6,7,8.Drain 1,2,

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS : 30V DFN5*6 DFN3*3 High ruggedness ID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V 1 8 1 8 RDS(ON) : 6.8m@VGS=4.5V (Typ 5.7m)@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m@VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A

SW055R03VTN-channel Enhanced mode DFN3*3/DFN5*6 MOSFETFeaturesBVDSS : 30VDFN5*6DFN3*3 High ruggednessID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V1 8 1 8RDS(ON) : 6.8m@VGS=4.5V(Typ 5.7m)@VGS=10V2 7 2 7 Low Gate Charge (Typ 25nC) 6 63 35.7m@VGS=10V4 5 54 Improved dv/dt Capability 100% Avalanche TestedD Application:DC-DC Converte

SW065R03VLTN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6 BVDSS : 30V High ruggedness Low RDS(ON) (Typ 9.7m)@VGS=4.5V18 ID : 58A(Typ 6.4m)@VGS=10V2 7RDS(ON) : 9.7m@VGS=4.5V6 Low Gate Charge (Typ 34nC)35 Improved dv/dt Capability 46.4m@VGS=10V 100% Avalanche Tested Application:Synchronous Rectification,DLi Battery Protect

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

SW026R03VT N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 30V High ruggedness DFN5*6 Low RDS(ON) (Typ 3.4m)@VGS=4.5V ID : 19A (Typ 2.9m)@VGS=10V 1 8 RDS(ON) : 3.4m@VGS=4.5V Low Gate Charge (Typ 112nC) 2 7 6 3 Improved dv/dt Capability 2.9m@VGS=10V 5 4 100% Avalanche Tested Application:DC-DC Converter, Inverte

SW088R06VTN-channel Enhanced mode DFN5*6 MOSFETFeatures DFN5*6BVDSS : 60VID : 50A High ruggedness1 8 Low RDS(ON) (Typ 9.9m)@VGS=4.5V 2 7RDS(ON) : 9.9m@VGS=4.5V63(Typ 8.3m)@VGS=10V54 Low Gate Charge (Typ 49nC) 8.3m@VGS=10V Improved dv/dt Capability D 100% Avalanche Tested Application: Electronic Ballast, Motor 4.Gate 5,6,7,8.Dra

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

SW088R06VTN-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFETFeaturesTO-251TO-252 DFN5*6BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A1 8Low RDS(ON) (Typ 9.2m)@VGS=10V2 7RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)6354 Improved dv/dt Capability 9.2m@VGS=10V 100% Avalanche Tested1 122 Applicati

SW069R10VSN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9m)@VGS=4.5V18ID : 60ALow RDS(ON) (Typ 7m)@VGS=10V 2 763 RDS(ON) : 9m@VGS=4.5V Low Gate Charge (Typ 45nC)54 Improved dv/dt Capability 7m@VGS=10V 100% Avalanche Tested Application: Li Battery Protect Board,DSynchronous

SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS : 60V High ruggedness ID : 60A Low RDS(ON) (Typ 7.0m)@VGS=4.5V (Typ 6.0m)@VGS=10V RDS(ON) :7.0m@VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m@VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application

SW069R06VTN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6BVDSS : 60V High ruggednessID : 60A Low RDS(ON) (Typ 5.7m)@VGS=4.5V1 82 7(Typ 4.9m)@VGS=10V6 RDS(ON) :5.7m@VGS=4.5V3 Low Gate Charge (Typ 84nC) 54 Improved dv/dt Capability 4.9m@VGS=10V 100% Avalanche TestedD Application:Electronic Ballast, Motor ControlInverter 4.G

SW018R03VLTFeaturesN-channel Enhanced mode DFN5*6 MOSFET High ruggednessBVDSS : 30VDFN5*6 Low RDS(ON) (Typ 2.5m)@VGS=4.5V(Typ 1.6m)@VGS=10V ID : 120A18 Low Gate Charge (Typ 153nC)2 7RDS(ON) : 2.5m@VGS=4.5V Improved dv/dt Capability 63 100% Avalanche Tested 54 1.6m@VGS=10V Application:Synchronous Rectification,DLi Battery Prot

SW020R03VLTFeaturesN-channel Enhanced mode DFN5*6 MOSFET High ruggednessBVDSS : 30VDFN5*6 Low RDS(ON) (Typ 3.4m)@VGS=4.5V(Typ 1.9m)@VGS=10V ID : 110A18 Low Gate Charge (Typ 143nC)2 7RDS(ON) : 3.4m@VGS=4.5V Improved dv/dt Capability 63 100% Avalanche Tested 54 1.9m@VGS=10V Application:Synchronous Rectification,DLi Battery Prot

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A