SWI1N60 Specs and Replacement

Type Designator: SWI1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO251

SWI1N60 substitution

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SWI1N60 datasheet

 ..1. Size:1087K  samwin
 swi1n60 swc1n60.pdf pdf_icon

SWI1N60

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS 600V TO-251 TO-92 TO-251S ID 1A High ruggedness Low RDS(ON) (Typ 6.6 )@VGS=10V RDS(ON) 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1... See More ⇒

 9.1. Size:643K  samwin
 swi1n55d.pdf pdf_icon

SWI1N60

SW1N55D N-channel Enhanced mode TO-251 MOSFET Features BVDSS 550V TO-251 ID 1A High ruggedness Low RDS(ON) (Typ 4.5 )@VGS=10V RDS(ON) 4.5 Low Gate Charge (Typ 7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Charger, Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET ... See More ⇒

Detailed specifications: SWI110R06VT, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT, SWI19N10, SWI1N55D, IRF540, SWI200R10VT, SWI20N20D, SWI230R45VT, SWI2N60DC, SWI4N60D, SWI4N60K, SWI4N65DB, SWI4N65DC

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