All MOSFET. SWI1N60 Datasheet

 

SWI1N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI1N60
   Marking Code: SW1N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO251

 SWI1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI1N60 Datasheet (PDF)

 ..1. Size:1087K  samwin
 swi1n60 swc1n60.pdf

SWI1N60 SWI1N60

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS : 600V TO-251 TO-92 TO-251S ID : 1A High ruggedness Low RDS(ON) (Typ 6.6)@VGS=10V RDS(ON) : 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1

 9.1. Size:643K  samwin
 swi1n55d.pdf

SWI1N60 SWI1N60

SW1N55D N-channel Enhanced mode TO-251 MOSFET Features BVDSS : 550V TO-251 ID : 1A High ruggedness Low RDS(ON) (Typ 4.5)@VGS=10V RDS(ON) : 4.5 Low Gate Charge (Typ 7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:Charger, Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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