All MOSFET. SWI4N70K Datasheet

 

SWI4N70K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI4N70K
   Marking Code: SW4N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO251

 SWI4N70K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI4N70K Datasheet (PDF)

 ..1. Size:738K  samwin
 swf4n70k swi4n70k swd4n70k.pdf

SWI4N70K SWI4N70K

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 700V High ruggedness ID : 4A Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

 7.1. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf

SWI4N70K SWI4N70K

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 7.2. Size:1038K  samwin
 swi4n70d swn4n70d swd4n70d swf4n70d.pdf

SWI4N70K SWI4N70K

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 9.1. Size:628K  samwin
 sw4n60dc swi4n60dc swd4n60dc.pdf

SWI4N70K SWI4N70K

SW4N60DCN-channel Enhancement mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252 BVDSS : 600VID : 4A High ruggedness RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 121 2 100% Avalanche Tested2 33 Application: LED,Charge11. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produce

 9.2. Size:840K  samwin
 swf4n65k swi4n65k swd4n65k.pdf

SWI4N70K SWI4N70K

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) :1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application:Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

 9.3. Size:757K  samwin
 swi4n65db.pdf

SWI4N70K SWI4N70K

SW4N65DB N-channel Enhanced mode TO-251 MOSFET TO-251 BVDSS : 650V Features ID : 4A High ruggedness RDS(ON) : 1.7 Low RDS(ON) (Typ 1.7)@VGS=10V Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application: LED, Charger, Adaptor 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

 9.4. Size:958K  samwin
 swf4n60k swi4n60k swd4n60k.pdf

SWI4N70K SWI4N70K

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

 9.5. Size:789K  samwin
 swi4n65dc swnc4n65dc.pdf

SWI4N70K SWI4N70K

SW4N65DC N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET TO-251 TO-251N-S2 BVDSS : 650V Features ID : 4A High ruggedness RDS(ON) : 1.95 Low RDS(ON) (Typ 1.95)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: Charger,TV-POWER 1. Gate 2. Drain 3. Source 3 Gener

 9.6. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf

SWI4N70K SWI4N70K

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

 9.7. Size:610K  samwin
 swi4n60dc swd4n60dc.pdf

SWI4N70K SWI4N70K

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application: LED,Charger 1 1. Gate 2. Drain 3. Source 3 General Descrip

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AUIRL3705Z | TK290P60Y | RLP1N06CLE | TK49N65W | P1260AT | RQ3C150BC | AP97T07AGP

 

 
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