SWK083R06VSM
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWK083R06VSM
Marking Code: 083R06VSM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 354
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115
Ohm
Package:
SOP8
SWK083R06VSM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWK083R06VSM
Datasheet (PDF)
..1. Size:731K samwin
swk083r06vsm.pdf
SW083R06VSMN-channel Enhanced mode SOP8 MOSFETFeaturesSOP8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 12m)@VGS=4.5V5ID : 10A6(Typ 9.5m)@VGS=10V78 Low Gate Charge (Typ 18nC)RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 49.5m@VGS=10V3 100% Avalanche Tested21 Application:Synchronous Rectification,DLi Battery Protect
3.1. Size:669K samwin
swk083r06vs.pdf
SW083R06VS N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 12m)@VGS=4.5V 5 ID : 10A 6 (Typ 9.5m)@VGS=10V 7 8 Low Gate Charge (Typ 18nC) RDS(ON) : 12m@VGS=4.5V 4 Improved dv/dt Capability 3 9.5m@VGS=10V 2 100% Avalanche Tested 1 Application:Synchronous Rectification,
4.1. Size:845K samwin
swk083r06vls.pdf
SW083R06VLSN-channel Enhanced mode SOP-8 MOSFETFeaturesSOP-8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 13m)@VGS=4.5V5ID : 10A6(Typ 9.7m)@VGS=10V78 Low Gate Charge (Typ 22nC)RDS(ON) : 13m@VGS=4.5V4 Improved dv/dt Capability 39.7m@VGS=10V2 100% Avalanche Tested1 Application:Synchronous Rectification,DLi Battery Protec
9.1. Size:681K samwin
sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf
SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A
9.2. Size:803K samwin
swk088r06vt.pdf
SW088R06VTN-channel Enhanced mode SOP8 MOSFETFeaturesSOP8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A56Low RDS(ON) (Typ 9.2m)@VGS=10V 78RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)43 Improved dv/dt Capability 29.2m@VGS=10V1 100% Avalanche Tested Application: Electronic Ballast, Motor DControl Sync
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