All MOSFET. SWK083R06VSM Datasheet

 

SWK083R06VSM Datasheet and Replacement


   Type Designator: SWK083R06VSM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOP8
 

 SWK083R06VSM substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWK083R06VSM Datasheet (PDF)

 ..1. Size:731K  samwin
 swk083r06vsm.pdf pdf_icon

SWK083R06VSM

SW083R06VSMN-channel Enhanced mode SOP8 MOSFETFeaturesSOP8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 12m)@VGS=4.5V5ID : 10A6(Typ 9.5m)@VGS=10V78 Low Gate Charge (Typ 18nC)RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 49.5m@VGS=10V3 100% Avalanche Tested21 Application:Synchronous Rectification,DLi Battery Protect

 3.1. Size:669K  samwin
 swk083r06vs.pdf pdf_icon

SWK083R06VSM

SW083R06VS N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 12m)@VGS=4.5V 5 ID : 10A 6 (Typ 9.5m)@VGS=10V 7 8 Low Gate Charge (Typ 18nC) RDS(ON) : 12m@VGS=4.5V 4 Improved dv/dt Capability 3 9.5m@VGS=10V 2 100% Avalanche Tested 1 Application:Synchronous Rectification,

 4.1. Size:845K  samwin
 swk083r06vls.pdf pdf_icon

SWK083R06VSM

SW083R06VLSN-channel Enhanced mode SOP-8 MOSFETFeaturesSOP-8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 13m)@VGS=4.5V5ID : 10A6(Typ 9.7m)@VGS=10V78 Low Gate Charge (Typ 22nC)RDS(ON) : 13m@VGS=4.5V4 Improved dv/dt Capability 39.7m@VGS=10V2 100% Avalanche Tested1 Application:Synchronous Rectification,DLi Battery Protec

 9.1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWK083R06VSM

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

SHOW MORE

Datasheet: SWJ6N90D , SWJ7N65DA , SWJ7N70K , SWJ8N90KU , SWK028P04 , SWK028P04VT , SWK083R06VLS , SWK083R06VS , RFP50N06 , SWK110R03VT , SWK110R06VT , SWK120R45VT , SWK130R06VT , SWK15N04V , SWK15N06V , SWK200R10VT , SWK230R45VT .

History: IXTK180N15 | RT3K11M | TSG10N06AT | RTQ045N03TR | PM5Q2EA | PKCD0BB | DH100P28I

Keywords - SWK083R06VSM MOSFET datasheet

 SWK083R06VSM cross reference
 SWK083R06VSM equivalent finder
 SWK083R06VSM lookup
 SWK083R06VSM substitution
 SWK083R06VSM replacement

 

 
Back to Top

 


 
.