SWN4N50K Specs and Replacement

Type Designator: SWN4N50K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 112.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251

SWN4N50K substitution

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SWN4N50K datasheet

 ..1. Size:830K  samwin
swn4n50k swd4n50k swf4n50k.pdf pdf_icon

SWN4N50K

SW4N50K N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET Features TO-251N TO-252 TO-220F BVDSS 500V ID 4A High ruggedness Low RDS(ON) (Typ 0.76 )@VGS=10V RDS(ON) 0.76 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charger, Adaptor, LED 3 3 3 1. Gate 2. Drain 3. S... See More ⇒

 9.1. Size:1007K  samwin
swf4n65k2 swn4n65k2 swd4n65k2.pdf pdf_icon

SWN4N50K

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2... See More ⇒

 9.2. Size:1038K  samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N50K

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

 9.3. Size:1038K  samwin
swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N50K

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

Detailed specifications: SWMN7N90D, SWMN8N65LA, SWN10N50K, SWN10N65K, SWN10N80K2, SWN2N65K, SWN2N70D, SWN3N80D, 8N60, SWN4N65DA, SWN4N65DD, SWN4N65K2, SWN4N70D1, SWN4N70K2, SWN4N70L, SWN4N80D, SWN4N80K

Keywords - SWN4N50K MOSFET specs

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