SWN4N80D Datasheet. Specs and Replacement
Type Designator: SWN4N80D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ -
Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO251
- MOSFET ⓘ Cross-Reference Search
SWN4N80D datasheet
..1. Size:839K samwin
swf4n80d swn4n80d swd4n80d.pdf 
SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.... See More ⇒
..2. Size:1046K samwin
swf4n80d swn4n80d swd4n80d swj4n80d.pdf
SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features TO-220F TO-251N TO-252 TO-262N BVDSS 800V High ruggedness ID 4A Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 1 2 2 Application Adaptor, LED, 2 2 3 3 3 3 Industrial Power 1 1. Gate 2... See More ⇒
7.1. Size:965K samwin
swf4n80k swn4n80k swd4n80k.pdf
SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒
9.1. Size:1007K samwin
swf4n65k2 swn4n65k2 swd4n65k2.pdf
SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2... See More ⇒
9.2. Size:1038K samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒
9.3. Size:1038K samwin
swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒
9.4. Size:855K samwin
swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf
SW4N70D1 N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFET Features TO-220F TO-251S TO-251N TO-251N-S2 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 2.1 )@VGS=10V RDS(ON) 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application Adapter,LED,Charger 3 3 3 3 1 1. Gate ... See More ⇒
9.5. Size:907K samwin
swf4n70k2 swn4n70k2 swd4n70k2.pdf
SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.15 )@VGS=10V RDS(ON) 1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S... See More ⇒
9.6. Size:1046K samwin
swf4n70l swn4n70l swd4n70l.pdf
SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour... See More ⇒
9.7. Size:830K samwin
swn4n50k swd4n50k swf4n50k.pdf
SW4N50K N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET Features TO-251N TO-252 TO-220F BVDSS 500V ID 4A High ruggedness Low RDS(ON) (Typ 0.76 )@VGS=10V RDS(ON) 0.76 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charger, Adaptor, LED 3 3 3 1. Gate 2. Drain 3. S... See More ⇒
9.8. Size:913K samwin
swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf
SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2 ... See More ⇒
9.9. Size:1095K samwin
swf4n65da swn4n65da swd4n65da swnb4n65da.pdf
SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow... See More ⇒
Detailed specifications: SWN3N80D, SWN4N50K, SWN4N65DA, SWN4N65DD, SWN4N65K2, SWN4N70D1, SWN4N70K2, SWN4N70L, 7N60, SWN4N80K, SWN5N70K, SWN6N60D, SWN6N65K, SWN6N70DB, SWN7N65DA, SWN7N65DD, SWN7N65K
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