All MOSFET. SWP046R68E8T Datasheet

 

SWP046R68E8T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP046R68E8T
   Marking Code: SW046R68E8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 195.3 W
   Maximum Drain-Source Voltage |Vds|: 68 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 145 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 145 nC
   Rise Time (tr): 75 nS
   Drain-Source Capacitance (Cd): 543 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0054 Ohm
   Package: TO220

 SWP046R68E8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP046R68E8T Datasheet (PDF)

 ..1. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf

SWP046R68E8T SWP046R68E8T

SW046R68E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=10V ID : 145A Low Gate Charge (Typ 145nC)RDS(ON) : 4.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,212 3Li Battery Protect Board, Inverter311. Gate 2.Drain

 7.1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf

SWP046R68E8T SWP046R68E8T

SW046R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 150A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

 7.2. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf

SWP046R68E8T SWP046R68E8T

SW046R08E9TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 4.5m)@VGS=10V ID : 160A Low Gate Charge (Typ 182nC)RDS(ON) : 4.5m Improved dv/dt Capability 100% Avalanche Tested2 Application:Synchronous Rectification,1 12 2Li Battery Protect Board, Inverter3 311. Gate 2.Drain 3.

 9.1. Size:729K  samwin
 swp042r10es swb042r10es.pdf

SWP046R68E8T SWP046R68E8T

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 100V ID : 120A High ruggedness Low RDS(ON) (Typ 4.4m)@VGS=10V RDS(ON) : 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application: Synchronous Rectification, 3 Li Battery Protect Board, In

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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