All MOSFET. SWP050R95E8S Datasheet

 

SWP050R95E8S Datasheet and Replacement


   Type Designator: SWP050R95E8S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 535 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO220
 

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SWP050R95E8S Datasheet (PDF)

 ..1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf pdf_icon

SWP050R95E8S

SW050R95E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Motor Drives11. Gate 2.Dra

 ..2. Size:825K  samwin
 swp050r95e8s.pdf pdf_icon

SWP050R95E8S

SW050R95E8SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral

 7.1. Size:726K  samwin
 swp050r68e8t.pdf pdf_icon

SWP050R95E8S

SW050R68E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 130A Low RDS(ON) (Typ 5.2m)@VGS=10VRDS(ON) : 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP050R95E8S

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

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Datasheet: SWP035R10E6S , SWP036R10E8S , SWP038R04VT , SWP042R10ES , SWP046R08E8T , SWP046R08E9T , SWP046R68E8T , SWP050R68E8T , IRFP460 , SWP051R08ES , SWP055R68E7T , SWP056R68E7T , SWP058R06E7T , SWP058R65E7T , SWP058R72E7T , SWP058R75E7T , SWP060R65E7T .

History: IPD50N04S4L-08 | AP6679BGP | BSC040N10NS5 | BSB044N08NN3G | STL4N10F7 | OSG60R360FSF | RTR030N05

Keywords - SWP050R95E8S MOSFET datasheet

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