SWP060R68E7T Datasheet. Specs and Replacement

Type Designator: SWP060R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 171 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 313 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

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SWP060R68E7T datasheet

 ..1. Size:816K  samwin
swp060r68e7t swb060r68e7t.pdf pdf_icon

SWP060R68E7T

SW060R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 6.1. Size:813K  samwin
swp060r65e7t swb060r65e7t.pdf pdf_icon

SWP060R68E7T

SW060R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.1. Size:784K  samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SWP060R68E7T

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒

 9.2. Size:835K  samwin
swp066r72e7t.pdf pdf_icon

SWP060R68E7T

SW066R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.9m )@VGS=10V Low Gate Charge (Typ 89nC) RDS(ON) 6.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Descr... See More ⇒

Detailed specifications: SWP051R08ES, SWP055R68E7T, SWP056R68E7T, SWP058R06E7T, SWP058R65E7T, SWP058R72E7T, SWP058R75E7T, SWP060R65E7T, 10N60, SWP062R08E8T, SWP062R68E7T, SWP065R68E7T, SWP066R68E7T, SWP066R72E7T, SWP068R08E8T, SWP068R08ET, SWP068R68E7T

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