All MOSFET. SWP070R08E7T Datasheet

 

SWP070R08E7T Datasheet and Replacement


   Type Designator: SWP070R08E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO220
 

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SWP070R08E7T Datasheet (PDF)

 ..1. Size:839K  samwin
 swp070r08e7t.pdf pdf_icon

SWP070R08E7T

SW070R08E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 80V High ruggedness Low RDS(ON) (Typ 7.6m)@VGS=10V ID : 100A Low Gate Charge (Typ 107nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source3General D

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWP070R08E7T

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.2. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWP070R08E7T

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 9.3. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWP070R08E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

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Datasheet: SWP062R68E7T , SWP065R68E7T , SWP066R68E7T , SWP066R72E7T , SWP068R08E8T , SWP068R08ET , SWP068R68E7T , SWP069R06VT , 2N7000 , SWP072R06ET , SWP072R08ET , SWP072R68E7T , SWP072R72E7T , SWP075R08E7T , SWP076R68E7T , SWP078R08E8T , SWP078R08ET .

History: HGA1K2N20ML | IXTY15P15T | MTN2510LE3 | DMN2400UV | AP60P20Q | AON6232 | 2SK2624ALS

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