All MOSFET. SWP072R72E7T Datasheet

 

SWP072R72E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP072R72E7T
   Marking Code: SW072R72E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 72 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 77 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 SWP072R72E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP072R72E7T Datasheet (PDF)

 ..1. Size:665K  samwin
 swp072r72e7t.pdf

SWP072R72E7T SWP072R72E7T

SW072R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 77nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

 7.1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf

SWP072R72E7T SWP072R72E7T

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 7.2. Size:677K  samwin
 swp072r68e7t.pdf

SWP072R72E7T SWP072R72E7T

SW072R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descri

 7.3. Size:685K  samwin
 swb072r06et swp072r06et.pdf

SWP072R72E7T SWP072R72E7T

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQPF6N90C | FQP9N30

 

 
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