All MOSFET. SWSI4N60D Datasheet

 

SWSI4N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWSI4N60D
   Marking Code: SW4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 152.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO251

 SWSI4N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWSI4N60D Datasheet (PDF)

 ..1. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf

SWSI4N60D SWSI4N60D

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

 0.1. Size:851K  samwin
 swd4n60da swf4n60da swsi4n60da.pdf

SWSI4N60D SWSI4N60D

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

 7.1. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf

SWSI4N60D SWSI4N60D

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

 8.1. Size:833K  samwin
 swsi4n40dc swd4n40dc.pdf

SWSI4N60D SWSI4N60D

SW4N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-252 BVDSS : 400V TO-251S ID : 4A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) : 1.4 Low Gate Charge (Typ 11.7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:LED, DC-DC 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This

 8.2. Size:855K  samwin
 swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf

SWSI4N60D SWSI4N60D

SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFN140

 

 
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