SP8076E Datasheet and Replacement
Type Designator: SP8076E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TSON3.3X3.3
- MOSFET Cross-Reference Search
SP8076E Datasheet (PDF)
sp8076e.pdf

GreenProductSP8076EaS mHop Microelectronics C orp.Ver 1.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.3.8 @ VGS=10VSuface Mount Package.33V 27A4.9 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX
sp8076el.pdf

GreenProductSP8076ELaS mHop Microelectronics C orp.Ver 1.4N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.4.0 @ VGS=10VSuface Mount Package.33V 27A 4.5 @ VGS=6VESD Protected.5.5 @ VGS=4.5VD 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3
sp8076.pdf

GreenProductSP8076aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.4.6 @ VGS=10VSuface Mount Package.33V 27A6.9 @ VGS=4.5V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - SP8076E MOSFET datasheet
SP8076E cross reference
SP8076E equivalent finder
SP8076E lookup
SP8076E substitution
SP8076E replacement
History: VBNC1303 | IRFS4010PBF



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