All MOSFET. SP8076E Datasheet

 

SP8076E Datasheet and Replacement


   Type Designator: SP8076E
   Marking Code: 8076E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 41 nC
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TSON3.3X3.3
 

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SP8076E Datasheet (PDF)

 ..1. Size:112K  samhop
 sp8076e.pdf pdf_icon

SP8076E

GreenProductSP8076EaS mHop Microelectronics C orp.Ver 1.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.3.8 @ VGS=10VSuface Mount Package.33V 27A4.9 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX

 0.1. Size:107K  samhop
 sp8076el.pdf pdf_icon

SP8076E

GreenProductSP8076ELaS mHop Microelectronics C orp.Ver 1.4N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.4.0 @ VGS=10VSuface Mount Package.33V 27A 4.5 @ VGS=6VESD Protected.5.5 @ VGS=4.5VD 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3

 8.1. Size:79K  samhop
 sp8076.pdf pdf_icon

SP8076E

GreenProductSP8076aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.4.6 @ VGS=10VSuface Mount Package.33V 27A6.9 @ VGS=4.5V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol

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History: PHD50N03LT

Keywords - SP8076E MOSFET datasheet

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