SWT47N65K2F
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWT47N65K2F
Marking Code: SW47N65K2F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 266
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 47
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 102
nC
trⓘ - Rise Time: 118
nS
Cossⓘ -
Output Capacitance: 149
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072
Ohm
Package:
TO247
SWT47N65K2F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWT47N65K2F
Datasheet (PDF)
..1. Size:739K samwin
swt47n65k2f.pdf
SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 47A High ruggedness Low RDS(ON) (Typ 59m)@VGS=10V RDS(ON) : 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application: Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th
4.1. Size:810K samwin
sw47n65k2 swt47n65k2.pdf
SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p
4.2. Size:748K samwin
swt47n65k2.pdf
SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This
5.1. Size:733K samwin
swt47n65k.pdf
SW47N65K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) :60m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO
5.2. Size:618K samwin
swt47n65kf.pdf
SW47N65KF N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V High ruggedness ID : 47A Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) : 60m Low Gate Charge (Typ 152nC) Extremely Low trr and Qrr 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source
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