All MOSFET. 2SK2930 Datasheet

 

2SK2930 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2930

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: TO220AB

2SK2930 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2930 Datasheet (PDF)

1.1. rej03g1044_2sk2930ds.pdf Size:102K _renesas

2SK2930
2SK2930

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sk2930.pdf Size:87K _renesas

2SK2930
2SK2930

2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 (Previous: ADE-208-553C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

4.1. rej03g1045_2sk2931ds.pdf Size:101K _renesas

2SK2930
2SK2930

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sk2932.pdf Size:87K _renesas

2SK2930
2SK2930

2SK2932 Silicon N Channel MOS FET High Speed Power Switching REJ03G1046-0400 (Previous: ADE-208-555B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.055 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.3. 2sk2935.pdf Size:121K _renesas

2SK2930
2SK2930

2SK2935 Silicon N Channel MOS FET High Speed Power Switching REJ03G1049-0400 (Previous: ADE-208-588B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.4. 2sk2939.pdf Size:128K _renesas

2SK2930
2SK2930

2SK2939(L), 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous: ADE-208-562D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Packag

4.5. rej03g1051_2sk2937ds.pdf Size:136K _renesas

2SK2930
2SK2930

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1053_2sk2939lsds.pdf Size:142K _renesas

2SK2930
2SK2930

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk2937.pdf Size:121K _renesas

2SK2930
2SK2930

2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.4.00

4.8. 2sk2934.pdf Size:87K _renesas

2SK2930
2SK2930

2SK2934 Silicon N Channel MOS FET High Speed Power Switching REJ03G1048-0400 (Previous: ADE-208-557B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.9. 2sk2936.pdf Size:121K _renesas

2SK2930
2SK2930

2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00

4.10. 2sk2938.pdf Size:95K _renesas

2SK2930
2SK2930

2SK2938(L), 2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1052-0400 (Previous: ADE-208-561B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Packag

4.11. 2sk2931.pdf Size:87K _renesas

2SK2930
2SK2930

2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 (Previous: ADE-208-554C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

4.12. 2sk2933.pdf Size:87K _renesas

2SK2930
2SK2930

2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 (Previous: ADE-208-556B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 ? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of

4.13. rej03g1052_2sk2938lsds.pdf Size:109K _renesas

2SK2930
2SK2930

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SK2869 , 2SK2885 , 2SK2912 , 2SK2925 , 2SK2926 , 2SK2927 , 2SK2928 , 2SK2929 , J112 , 2SK2931 , 2SK2932 , 2SK2933 , 2SK2934 , 2SK2935 , 2SK2936 , 2SK2937 , 2SK2938 .

 


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