SWY7N65D MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

SWY7N65D Specs and Replacement

Type Designator: SWY7N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 108 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

SWY7N65D substitution

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SWY7N65D datasheet

..1. Size:1401K samwin
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SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO- 220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFET Features TO-220 TO-251 TO-251N TO-251U TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 2 3 3 3 3 3 Improved dv/dt Capability D TO-220FT TO-262N DFN... See More ⇒

Detailed specifications: SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , 8205A , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M .