S10H08RP Datasheet and Replacement
Type Designator: S10H08RP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 154 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 368 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
Package: TO220
S10H08RP substitution
S10H08RP Datasheet (PDF)
s10h08r s10h08s s10h08rn s10h08rp.pdf

S10H08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=82A DC Motor Control Rds(on)(typ)=9m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
s10h07m.pdf

S10H07MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =100V,I =70ADS DDC Motor ControlRds(on)(typ)=9.2m@Vgs=10VDC-DC Converters100% Avalanche TestedBMS100% Rg TestedSMPSLead-Free (RoHS Compliant)Automotive EnvironmentInternal Circuit and Pin DescriptionDDGGSSPackage
s10h06r s10h06s s10h06rn s10h06rp.pdf

S10H06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=60A DC Motor Control Rds(on)(typ)=15m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
Datasheet: SWYS069R10VS , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M , S10H08R , S10H08RN , 5N60 , S10H08S , S10H12R , S10H12RN , S10H12RP , S10H12S , S10H16R , S10H16RN , S10H16RP .
History: NCE60NF260K
Keywords - S10H08RP MOSFET datasheet
S10H08RP cross reference
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S10H08RP substitution
S10H08RP replacement
History: NCE60NF260K



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