All MOSFET. S10H18S Datasheet

 

S10H18S Datasheet and Replacement


   Type Designator: S10H18S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 284 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id| ⓘ - Maximum Drain Current: 171 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 180 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 871 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263
 

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S10H18S Datasheet (PDF)

 ..1. Size:2275K  cn si-tech
s10h18r s10h18s s10h18rn s10h18rp.pdf pdf_icon

S10H18S

S10H18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=171A DC Motor Control Rds(on)(typ)=4.2m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.1. Size:2299K  cn si-tech
s10h16r s10h16s s10h16rn s10h16rp.pdf pdf_icon

S10H18S

S10H16R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=155A DC Motor Control Rds(on)(typ)=5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.2. Size:2271K  cn si-tech
s10h12r s10h12s s10h12rn s10h12rp.pdf pdf_icon

S10H18S

S10H12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=120A DC Motor Control Rds(on)(typ)=6.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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