S8045RP Datasheet and Replacement
Type Designator: S8045RP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 1645 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO220
S8045RP substitution
S8045RP Datasheet (PDF)
s8045r s8045s s8045rn s8045rp.pdf

S8045R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=120A DC Motor Control Rds(on)(typ)=4.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
Datasheet: S70N06RP , S70N06S , S70N08ZR , S70N08ZS , S70N08ZRN , S70N08ZRP , S8045R , S8045RN , IRFP064N , S8045S , S80N08R , S80N08RN , S80N08RP , S80N08S , S80N10RN , S80N10RP , S80N22T .
History: HGB200N10SL | SWP19N10 | 24NM60L-T47S-T | 2N65G-TND-R | SLP10N65A | IXTJ6N150 | PMZ290UNE2
Keywords - S8045RP MOSFET datasheet
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History: HGB200N10SL | SWP19N10 | 24NM60L-T47S-T | 2N65G-TND-R | SLP10N65A | IXTJ6N150 | PMZ290UNE2



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