All MOSFET. HGA046NE6AL Datasheet

 

HGA046NE6AL Datasheet and Replacement


   Type Designator: HGA046NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-220F
 

 HGA046NE6AL substitution

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HGA046NE6AL Datasheet (PDF)

 ..1. Size:903K  cn hunteck
 hga046ne6al.pdf pdf_icon

HGA046NE6AL

P-1HGA046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness53 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 4.1. Size:902K  cn hunteck
 hga046ne6a.pdf pdf_icon

HGA046NE6AL

P-1HGA046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability53 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

 9.1. Size:772K  cn hunteck
 hga040n06s.pdf pdf_icon

HGA046NE6AL

HGA040N06S P-160V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ m Optimized for high speed switching76 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitP

 9.2. Size:791K  cn hunteck
 hga045ne4sl.pdf pdf_icon

HGA046NE6AL

HGA045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

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Datasheet: HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL , HGA046NE6A , 12N60 , HGA053N06S , HGA053N06SL , HGA055N10SL , HGA058N08SL , HGA059N08A , HGA059N12S , HGA059N12SL , HGA080N10A .

History: IPD70N12S3L-12 | IPP65R660CFD | IPC100N04S5L-1R1 | MIC94052BC6TR | GSM9435WS | APT8024B2VFR | AM90N02-04D

Keywords - HGA046NE6AL MOSFET datasheet

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 HGA046NE6AL equivalent finder
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