HGA195N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGA195N15S
Marking Code: GA195N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0195 Ohm
Package: TO-220F
HGA195N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGA195N15S Datasheet (PDF)
hga195n15s.pdf
HGA195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability30 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitTO
hga190n15sl.pdf
HGA190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 32.5 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and
hga190n15s.pdf
HGA190N15S P-1150V N-Ch Power MOSFET150 VVDSFeatureTO-220F 16RDS(on),typ m Optimized for high speed smooth switching35 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and High Speed CircuitP
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