HGA195N15S Specs and Replacement
Type Designator: HGA195N15S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: TO-220F
HGA195N15S substitution
- MOSFET ⓘ Cross-Reference Search
HGA195N15S datasheet
hga195n15s.pdf
HGA195N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 16 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 30 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit TO... See More ⇒
hga190n15sl.pdf
HGA190N15SL P-1 150V N-Ch Power MOSFET 150 V VDS Feature 16.0 RDS(on),typ VGS=10V m Optimized for high speed smooth 19 RDS(on),typ VGS=4.5V m switching,Logic level 32.5 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Drain Hard Switching and... See More ⇒
hga190n15s.pdf
HGA190N15S P-1 150V N-Ch Power MOSFET 150 V VDS Feature TO-220F 16 RDS(on),typ m Optimized for high speed smooth switching 35 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching and High Speed Circuit P... See More ⇒
Detailed specifications: HGA120N10A, HGA130N12S, HGA130N12SL, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, IRF1407, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A
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