All MOSFET. HGB020N10S Datasheet

 

HGB020N10S Datasheet and Replacement


   Type Designator: HGB020N10S
   Marking Code: GB020N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 2657 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-263
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HGB020N10S Datasheet (PDF)

 ..1. Size:1055K  cn hunteck
 hgb020n10s hgk020n10s hgp020n10s.pdf pdf_icon

HGB020N10S

, P-1HGB020N10S HGK020N10SHGP020N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 1.8 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested327 AID (Sillicon Limited) Lead Free, Halogen Free180 AID (Package Limit

 7.1. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGB020N10S

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGB020N10S

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:812K  cn hunteck
 hgb029n06sl hgp029n06sl.pdf pdf_icon

HGB020N10S

HGB029N06SL HGP029N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature1.8RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic LevelVGS=4.5V2.7RDS(on),typ m Enhanced Body diode dv/dt capability2.1RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche RuggednessVGS=4.5V3.0RDS(on),typ m 100% UIS Tested, 100% Rg Tested198 AID (Si

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Keywords - HGB020N10S MOSFET datasheet

 HGB020N10S cross reference
 HGB020N10S equivalent finder
 HGB020N10S lookup
 HGB020N10S substitution
 HGB020N10S replacement

 

 
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