All MOSFET. HGB020NE4S Datasheet

 

HGB020NE4S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB020NE4S
   Marking Code: GB020NE4S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 2210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-263

 HGB020NE4S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB020NE4S Datasheet (PDF)

 ..1. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf

HGB020NE4S HGB020NE4S

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 7.1. Size:1055K  cn hunteck
 hgb020n10s hgk020n10s hgp020n10s.pdf

HGB020NE4S HGB020NE4S

, P-1HGB020N10S HGK020N10SHGP020N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 1.8 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested327 AID (Sillicon Limited) Lead Free, Halogen Free180 AID (Package Limit

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf

HGB020NE4S HGB020NE4S

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:812K  cn hunteck
 hgb029n06sl hgp029n06sl.pdf

HGB020NE4S HGB020NE4S

HGB029N06SL HGP029N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature1.8RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic LevelVGS=4.5V2.7RDS(on),typ m Enhanced Body diode dv/dt capability2.1RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche RuggednessVGS=4.5V3.0RDS(on),typ m 100% UIS Tested, 100% Rg Tested198 AID (Si

 9.3. Size:976K  cn hunteck
 hgb028n08a hgp028n08a.pdf

HGB020NE4S HGB020NE4S

HGB028N08A , HGP028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 2.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.9RDS(on),typ mW Enhanced Avalanche Ruggedness182 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectif

 9.4. Size:971K  cn hunteck
 hgb021n08a hgp021n08a.pdf

HGB020NE4S HGB020NE4S

HGB021N08A , HGP021N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2RDS(on),typ mW Enhanced Avalanche Ruggedness285 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectific

 9.5. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf

HGB020NE4S HGB020NE4S

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 9.6. Size:1004K  cn hunteck
 hgb025n12s.pdf

HGB020NE4S HGB020NE4S

P-1HGB025N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263-7 1.9RDS(on),typ mW Enhanced Body diode dv/dt capability285 AID (Sillicon Limited) Enhanced Avalanche Ruggedness240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and Hig

 9.7. Size:823K  cn hunteck
 hgb029ne4sl hgp029ne4sl.pdf

HGB020NE4S HGB020NE4S

HGB029NE4SL HGP029NE4SL P-1,45V N-Ch Power MOSFET45 VVDSFeature2.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level2.9RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness3.2RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested182 AID (Sillicon Limited)

 9.8. Size:1042K  cn hunteck
 hgb027n10a hgk027n10a hgp027n10a.pdf

HGB020NE4S HGB020NE4S

HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free

 9.9. Size:972K  cn hunteck
 hgb023ne6a hgp023ne6a.pdf

HGB020NE4S HGB020NE4S

,HGB023NE6A HGP023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.5RDS(on),typ mW Enhanced Avalanche Ruggedness190 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

 9.10. Size:999K  cn hunteck
 hgb025n10a.pdf

HGB020NE4S HGB020NE4S

HGB025N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching2.0RDS(on),typ mW Enhanced Body diode dv/dt capability258 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain DC/D

 9.11. Size:958K  cn hunteck
 hgb028ne6a hgp028ne6a.pdf

HGB020NE4S HGB020NE4S

HGB028NE6A , HGP028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.6RDS(on),typ mW Enhanced Avalanche Ruggedness181 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H

 9.12. Size:976K  cn hunteck
 hgb027n10s hgk029n10s hgp030n10s.pdf

HGB020NE4S HGB020NE4S

, P-1HGB027N10S HGK029N10SHGP030N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.25RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 2.42RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 2.50RDS(on),typ mW 100% UIS Tested, 100% Rg Tested260 AID (Sillicon Limited) Lead Free120 AID (Package Limited)App

 9.13. Size:979K  cn hunteck
 hgb027n12s hgp027n12s.pdf

HGB020NE4S HGB020NE4S

, P-1HGB027N12S HGP027N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.3RDS(on),typ mW Enhanced Avalanche Ruggedness269 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSN06N3P6 | BUK655R0-75C

 

 
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