All MOSFET. HGK020NE4S Datasheet

 

HGK020NE4S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGK020NE4S
   Marking Code: GK020NE4S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 2210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-247

 HGK020NE4S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK020NE4S Datasheet (PDF)

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