HGB021N08A PDF and Equivalents Search

HGB021N08A , HGP021N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.7 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2 RDS(on),typ mW Enhanced Avalanche Ruggedness 285 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectific... See More ⇒

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited) ... See More ⇒

HGB029N06SL HGP029N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 1.8 RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic Level VGS=4.5V 2.7 RDS(on),typ m Enhanced Body diode dv/dt capability 2.1 RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche Ruggedness VGS=4.5V 3.0 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 198 A ID (Si... See More ⇒

, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli... See More ⇒

HGB028N08A , HGP028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 182 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectif... See More ⇒

, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

P-1 HGB025N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263-7 1.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 285 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

HGB029NE4SL HGP029NE4SL P-1 , 45V N-Ch Power MOSFET 45 V VDS Feature 2.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 2.9 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 3.2 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 182 A ID (Sillicon Limited) ... See More ⇒

HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free ... See More ⇒

, HGB023NE6A HGP023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.5 RDS(on),typ mW Enhanced Avalanche Ruggedness 190 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti... See More ⇒

, P-1 HGB020N10S HGK020N10S HGP020N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 1.8 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested 327 A ID (Sillicon Limited) Lead Free, Halogen Free 180 A ID (Package Limit... See More ⇒

HGB025N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 2.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 258 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain DC/D... See More ⇒

HGB028NE6A , HGP028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 181 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H... See More ⇒

, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App... See More ⇒

, P-1 HGB027N12S HGP027N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 269 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio... See More ⇒