HGP028N08A Specs and Replacement

Type Designator: HGP028N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 1003 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO-220

HGP028N08A substitution

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HGP028N08A datasheet

 ..1. Size:976K  cn hunteck
hgb028n08a hgp028n08a.pdf pdf_icon

HGP028N08A

HGB028N08A , HGP028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 182 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectif... See More ⇒

 7.1. Size:958K  cn hunteck
hgb028ne6a hgp028ne6a.pdf pdf_icon

HGP028N08A

HGB028NE6A , HGP028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 181 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H... See More ⇒

 7.2. Size:905K  cn hunteck
hgp028ne6al.pdf pdf_icon

HGP028N08A

HGP028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 174 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

 9.1. Size:861K  cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGP028N08A

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited) ... See More ⇒

Detailed specifications: HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, HGP030N10S, HGB027N12S, HGP027N12S, HGB028N08A, 50N06, HGB028NE6A, HGP028NE6A, HGB029N06SL, HGP029N06SL, HGB029NE4SL, HGP029NE4SL, HGB035N08A, HGP035N08A

Keywords - HGP028N08A MOSFET specs

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