HGP037N10T PDF and Equivalents Search

 

HGP037N10T Specs and Replacement


   Type Designator: HGP037N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-220
 

 HGP037N10T substitution

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HGP037N10T datasheet

 ..1. Size:1604K  cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGP037N10T

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools... See More ⇒

 5.1. Size:918K  cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP037N10T

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

 9.1. Size:968K  cn hunteck
hgb035n08a hgp035n08a.pdf pdf_icon

HGP037N10T

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig... See More ⇒

 9.2. Size:925K  cn hunteck
hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGP037N10T

, HGB039N12S HGK039N12S P-1 HGP039N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 3.6 RDS(on),TYP m Enhanced Body diode dv/dt capability 197 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard... See More ⇒

Detailed specifications: HGP035N08A , HGB035N10A , HGK035N10A , HGP035N10A , HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , P55NF06 , HGA037N10T , HGB037N15M , HGB039N08A , HGP039N08A , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S .

History: HGP028NE6A | AM90N03-08P | SDF054JAB-D | TSM9NB50CI | 2SK2556

Keywords - HGP037N10T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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