All MOSFET. HGB037N15M Datasheet

 

HGB037N15M Datasheet and Replacement


   Type Designator: HGB037N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 729 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-263-7
 

 HGB037N15M substitution

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HGB037N15M Datasheet (PDF)

 ..1. Size:1006K  cn hunteck
hgb037n15m.pdf pdf_icon

HGB037N15M

P-1HGB037N15M150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness220 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power ToolsPin4TO-263-7

 6.1. Size:918K  cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGB037N15M

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 6.2. Size:1604K  cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGB037N15M

HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

 9.1. Size:968K  cn hunteck
hgb035n08a hgp035n08a.pdf pdf_icon

HGB037N15M

HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig

Datasheet: HGK035N10A , HGP035N10A , HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , STP75NF75 , HGB039N08A , HGP039N08A , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S , HGP039N12S .

History: NCE70N900K | BUK954R2-55B | SI2334DS | HCS60R260ST | RFL2N06L | SI4800 | 2SK2360

Keywords - HGB037N15M MOSFET datasheet

 HGB037N15M cross reference
 HGB037N15M equivalent finder
 HGB037N15M lookup
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